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PD - 94605
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103 0.103 ID -32A -32A
IRHMS597260 200V, P-CHANNEL
4#
TECHNOLOGY
c
Low-Ohmic TO-254AA
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n n n
Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight High Electrical Conductive Package
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -32 -20 -128 208 1.67 20 354 -32 25 -4.1 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10s) 9.3 ( Typical )
g
For footnotes refer to the last page
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1
02/13/03
IRHMS597260
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-200 -- -- -2.0 23 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.103 -4.0 -- -10 -25 -100 100 175 75 70 35 50 75 100 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -20A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -20A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -32A VDS = -100V VDD = -100V, ID = -32A VGS =-12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7170 920 86
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -32 -128 -5.0 300 6.0
Test Conditions
A
V ns C Tj = 25C, IS = -32A, VGS = 0V Tj = 25C, IF =-32A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.21 -- 0.6 -- 48 C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMS597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max -- -4.0 -100 100 -10 0.103 0.103 -5.0 300KRads(Si)2 Min Max -200 -2.0 -- -- -- -- -- -- -- -5.0 -100 100 -10 0.103 0.103 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, I D = -1.0mA VGS =-20V VGS = 20 V VDS = -160V, VGS =0V VGS = -12V, ID =-20A VGS = -12V, ID =-20A VGS = 0V, IS = -32A
Drain-to-Source Breakdown Voltage -200 Gate Threshold Voltage -2.0 Gate-to-Source Leakage Forward -- Gate-to-Source Leakage Reverse -- Zero Gate Voltage Drain Current -- Static Drain-to-Source -- On-State Resistance (TO-3) Static Drain-to-Source On-State -- Resistance(Low-OhmicTO-254AA) Diode Forward Voltage --
1. Part number IRHMS597260 2. Part number IRHMS593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 200 - 200 - 200 - 200 -75 32.7 - 200 - 200 - 200 - 50 -- 28.5 - 200 - 200 - 200 - 35 --
-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS597260
Pre-Irradiation
1000
-I D , Drain-to-Source Current (A)
100
-5.0V
-I D , Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
1000
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP
-5.0V
10
10
20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -32A
-I D , Drain-to-Source Current ( )
2.0
100
T J = 25C T J = 150C
1.5
1.0
VDS = -50V 20s PULSE WIDTH 15 10 5 5.5 6 6.5 7 7.5 8 -V GS, Gate-to-Source Voltage (V)
0.5
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHMS597260
12000
VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds
16 ID= -32A
-V GS, Gate-to-Source Voltage (V)
10000
Crss = C gd Coss = C + Cgd ds
VDS= -160V VDS= -100V VDS= -40V
C, Capacitance (pF)
12
8000
Ciss
6000
8
4000
Coss
4
2000
Crss
0 1 10 100
0 0 20 40 60 80 100 120 QG Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current ( )
100 T J = 150C 10 TJ = 25C 1
-I D , Drain-to-Source Current (A)
100
100s
10
1ms
Tc = 25C Tj = 150C Single Pulse 1 10 100
0.1 0.5 1.5 2.5 3.5 4.5
VGS = 0V 5.5 6.5
10ms
1000
1
-VSD , Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHMS597260
Pre-Irradiation
35
VDS VGS RG
RD
30
D.U.T.
+
-ID , Drain Current (A)
25
20
VGS
Pulse Width 1 s Duty Factor 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V DD
Pre-Irradiation
IRHMS597260
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
800
RG
D .U .T IA S D R IV E R
0 .0 1
+
VD D V DD A
600
ID -14.3A -20.2A BOTTOM -32A TOP
VGS -2 0 V
tp
400
15V
200
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
-12V 12V
.2F .3F
-12 V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHMS597260
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=0.7mH Peak IL = -32A, VGS = -12V ISD -32A, di/dt -220A/s, VDD -200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Omic TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
3X 3.81 [.150] NOT ES : 1. 2. 3. 4. 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E
3.81 [.150]
DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUT LINE T O-254AA.
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
8
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